WAM® 10 SiC LC – Silicon Carbide Based Low Cement Castable

WAM® 10 SiC LC contains the least amount of Silicon Carbide in this family of products and  is thus the most economical.  The introduction of Silicon Carbide provides additional abrasion resistance in the material matrix. Additionally, Silicon Carbide  provides a degree of alkali resistance making WAM® 10 SiC LC a good choice of product if you are experiencing alkali attack with an alumina based low cement castable system.

 

Silicon carbide will oxidize to form SiO2 at temperatures above 2500oF in the presence of oxygen. This will initially only occur on the surface to near surface ,but as the product wears the oxidation will continue. Oxidation is not beneficial for abrasion resistance as the SiC is the mineral component which provides this characteristic. However, it is desirable if alkali resistance is the characteristic desired.

 

WAM® 10 SiC LC finds application in several areas as a general thermal protection material where a degree of abrasion resistance is required. This includes a variety of rotary or feed application areas where a solid material is moving across or impacting the face of the refractory material. Examples are rotary kilns, hearths, troughs, cyclones, fluidized beds.

Typical Technical Data
WAM® 10 SiC LC                                                                                     PDF Download

Classification:Low Cement Castable
Placement Method:Vibration Casting, Pumping / Shotcreteing
Available Application Packages:AL - Aluminum Penetration Resistant
C - Coarse Aggregate
F - Fine Aggregate
Typical Water Requirement (%wt):5
Material Required for Estimating (lb/ft3):160
Maximum Recommended Service Temperature (°F):2500/3200*
* oxidizing atmosphere / reducing atmosphere

CHEMICAL ANALYSIS
Calculated wt.% Based on Common Oxides

Aluminum Oxide (Al2O3):54.8 %
Silicon Dioxide (SiO2):30.3 %
Titanium Dioxide (TiO2):1.7 %
Iron(III) Oxide (Fe2O3):0.9 %
Calcium Oxide (CaO):2.2 %
Magnesium Oxide (MgO):0.1%
Combined Alkali Oxide (Na2O + K2O):0.2 %
Silicon Carbide:9.6 %

PHYSICAL PROPERTIES

Temperature
(°F)
Density
(lb/ft3)
Modulus of
Rupture (psi)
Cold Crushing
Strength (psi)
Permanent
Linear Change (%)
After 230162253022,180n/a
After 1500160221017,800-0.2
After 2500 (in air)n/an/an/a+0.5

Additional technical data may be available. Please contact your sales representative for more information.
Data on this table represent typical properties and cannot be used for specification purposes.